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MRF7S19120NR1 Datasheet RF Power Field Effect Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

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Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev.

0, 9/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for CDMA and multicarrier amplifier applications.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units.

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