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MRF8P9300HSR6 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF8P9300HSR6, a member of the MRF8P9300HR6 RF Power Field Effect Transistors family.

Datasheet Summary

Description

Short RF Bead 0.2 pF Chip Capacitor 39 pF Chip Capacitors 1.1 pF Chip Capacitors 2.7 pF Chip Capacitors 5.1 pF Chip Capacitors 3.0 pF Chip Capacitors 10 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 1.0 pF Chip Capacitors 0.5 pF Chip Capacitors 0.8 pF Chip Capac

Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

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Datasheet preview – MRF8P9300HSR6

Datasheet Details

Part number MRF8P9300HSR6
Manufacturer Freescale Semiconductor
File Size 411.05 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF8P9300HSR6 Datasheet
Additional preview pages of the MRF8P9300HSR6 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.6 19.6 19.4 hD (%) 35.4 35.6 35.8 Output PAR (dB) 6.0 6.0 5.9 ACPR (dBc) - 37.3 - 37.1 - 36.7 MRF8P9300HR6 MRF8P9300HSR6 920 - 960 MHz, 100 W AVG.
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