Part MRF8P9300HSR6
Description RF Power Field Effect Transistors
Category Transistor
Manufacturer Freescale Semiconductor
Size 411.05 KB
Freescale Semiconductor
MRF8P9300HSR6

Overview

  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.