* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Sour
MRF8S21200HR6 Datasheet (345.17 KB)
MRF8S21200HR6
Freescale Semiconductor
345.17 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mod.
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