Overview: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.3 19.1 hD (%) 51.6 52.9 54.1 MRF8S9100HR3 MRF8S9100HSR3
920 - 960 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ] 108 Watts CW • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg.
Gps (dB) 19.1 19.1 19.0 hD (%) 43 44 45 SR1 @ 400 kHz (dBc) - 64.1 - 63.6 - 62.8 SR2 @ 600 kHz (dBc) - 74.5 - 74.6 - 75.1 EVM (% rms) 1.8 2.0 2.