MRF8S9100HSR3 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.3 19.1 hD (%) 51.6 52.9 54.1 MRF8S9100HR3 MRF8S9100HSR3 920 - 960 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ] 108 Watts CW • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg. Gps (dB) 19.1 19.1 19.0 hD (%) 43 44 45 SR1 @ 400 kHz (dBc) - 64.1 - 63.6 - 62.8 SR2 @ 600 kHz (dBc) - 74.5 - 74.6 - 75.1 EVM (% rms) 1.8 2.0 2.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	MRF8S9100HSR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	335.08 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8S9100HSR3 MRF8S9100HR3 Datasheet (PDF)

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
RoHS Compliant www. DataSheet4U. com.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage St.

MRF8S9100HSR3 Distributor

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number	Description
MRF8S9100HR3	RF Power Field Effect Transistors
MRF8S9102NR3	RF Power Field Effect Transistor
MRF8S9170NR3	RF Power Field Effect Transistor
MRF8S9200NR3	RF Power Field Effect Transistor
MRF8S9220HR3	RF Power Field Effect Transistors
MRF8S9220HSR3	RF Power Field Effect Transistors
MRF8S9260HR3	RF Power Field Effect Transistors
MRF8S9260HSR3	RF Power Field Effect Transistors
MRF8S18120HR3	RF Power Field Effect Transistors
MRF8S18120HSR3	RF Power Field Effect Transistors