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MRF8S9200NR3 Datasheet Rf Power Field Effect Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.9 19.9 19.5 hD (%) 37.7 37.1 36.8 Output PAR (dB) 6.1 6.1 6.0 ACPR (dBc) - 36.2 - 36.6 - 36.0 MRF8S9200NR3 920 - 960 MHz, 58 W AVG.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • 225°C Capable Plastic Package.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty Applicatio.

MRF8S9200NR3 Distributor

Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Logo MRF8S9200NR3 RF Power Field Effect Transistor NXP

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