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MRF8S9220HSR3 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF8S9220H Rev. 0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 65 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.7 19.8 19.4 hD (%) 35.1 35.3 35.7 Output PAR (dB) 6.1 6.2 6.1 ACPR (dBc) - 37.4 - 37.5 - 37.4 MRF8S9220HR3 MRF8S9220HSR3 920 - 960 MHz, 65 W AVG.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

MRF8S9220HSR3 Distributor

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