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MRF8S9260HSR3 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.  BITDyaQpni=dcwa1li7dS0tihn0g=mle3A--.,8CP4aorMuritHe=rzW,7I5n--pWCuDattMStsiAgAnPvaeglr.P,foAIQrRmMa=na7cg.en5:itdVuBdDeD@C=0l2ip.80p1iVn%ogl,tPsCr,ohbaanbnielitly on CCDF. Frequency Gps (dB) D Output PAR ACPR (%) (dB) (dBc) 920 MHz 18.8 36.0 6.3 --39.5 940 MHz 18.7 37.0 6.2 --38.6 960 MHz 18.6 38.5 5.9 --37.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Optimized for Doherty.

MRF8S9260HSR3 Distributor

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