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MRF9060LSR1 - RF Power Field Effect Transistors

Download the MRF9060LSR1 datasheet PDF. This datasheet also covers the MRF9060LR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF9060LR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

95F786 95F787 100B470JP 500X 44F3360 100B100JP 500X 93F2975 100B3R0JP 500X 100B0R5BP 500X 100B0R7BP 500X 14F185 A04T 5 3052 1648 10 Part Number Manufacturer Newark Newark ATC Newark ATC Newark ATC ATC ATC Newark Coilcraft Avnet MRF9060LR1 MRF9060LSR1 5 4 RF Device Da

Overview

Freescale Semiconductor Technical Data MRF9060 Rev.

8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial.

Key Features

  • 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz 930 945 960 Zsource Ω 0.80.
  • j0.10 0.80.
  • j0.05 0.81.
  • j0.10 Zload Ω 2.08.
  • j0.65 2.07.
  • j0.38 2.04.
  • j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF9060LR1 MRF9060LSR1 5.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Logo MRF9060LSR1 RF Power Field Effect Transistors NXP

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