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MRF9060NR1 - RF Power Field Effect Transistors

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General Description

95F786 95F787 100B470JP 500X 44F3360 100B110JP 500X 100B100JP 500X 93F2975 100B100JP 500X 100B3R9CP 500X 100B1R7BP 500X 14F185 A04T- 5 3052- 1648- 10 Part Number Manufacturer Newark Newark ATC Newark ATC Newark Newark ATC ATC Newark Coilcraft Avnet MRF9060NR1 MRF9060NBR1 4 RF Device Data Freescale

Overview

Freescale Semiconductor Technical Data Document Number: MRF9060N Rev.

10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.

• Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — - 31.5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power www.DataSheet4U.

Key Features

  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Integrated ESD Protection.
  • 200_C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
  • TO - 272 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF9060NR1 MRF9060NBR1 945 MHz, 60.

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