MRFE6S9060NR1 Datasheet | Freescale Semiconductor

Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - Integrated ESD Protection - 225°C Capable Plastic Package - Ro HS pliant - In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MRFE6S9060N Rev. 1, 10/2007 880 MHz, 14 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage Gate - Source Voltage Maximum Operation Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic VDSS VGS VDD Tstg TC TJ Symbol - 0.5, +66 - 0.5, + 12 32, +0 - 65 to +150 150 225 Value (2,3) Vdc Vdc Vdc °C °C °C Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 60 W CW Case Temperature 78°C, 14 W CW RθJC 0.77 0.88 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://.freescale./rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf....