MRFE6S9060NR1 Datasheet PDF - Freescale Semiconductor RF Power FET Specs

MRFE6S9060NR1 - RF Power FET

Datasheet Summary

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Integrated ESD Protection.
225°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MRFE6S9060N Rev. 1, 10/2007 MRFE6S9060NR1 880 MHz, 14 W AVG. , 28 V SINGLE N - CDMA.

Datasheet Details

Part number	MRFE6S9060NR1
Manufacturer	Freescale Semiconductor
File Size	629.53 KB
Description	RF Power FET
Datasheet	MRFE6S9060NR1 Datasheet
Additional preview pages of the MRFE6S9060NR1 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21.1 dB Drain Efficiency — 33% ACPR @ 750 kHz Offset — - 45.

Published: Jul 29, 2009 |