MRFE6S9160HSR3 Datasheet (RF Power Field Effect Transistors)

Part: MRFE6S9160HSR3
Manufacturer: Freescale Semiconductor
Size: 537.16 KB

MRFE6S9160HSR3 Key Features

Characterized with Series Equivalent Large
Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
RoHS pliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
CHANNEL RF POWER MOSFETs
06, STYLE 1 NI
06, STYLE 1 NI

MRFE6S9160HSR3 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. TTIDyrQapfif=cica1lC2So0idn0egmsleA8-,CTPahorruroiteu=rgN3h5-1CW3D)aCMtthsAa.AnPvngee.rl,foBISram-n9ad5nwcCiedDt@hM=A818(.0P22iMlo8Ht8,...