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MRFE6S9160HSR3 - RF Power Field Effect Transistors

Download the MRFE6S9160HSR3 datasheet PDF. This datasheet also covers the MRFE6S9160HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Part Number B1, B2 Ferrite Beads, Small 2743019447 C1, C2, C19 47 pF Chip Capacitors ATC100B470JT500XT C3, C11 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL C4 2.7 pF Chip Capacitor ATC100B2R7JT500XT C5, C6 15 pF Chip Capacitors ATC100B150JT500XT C7, C8 12 pF Chip Capacitors A

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9160H Rev. 1, 12/2008 MRFE6S9160HR3 MRFE6S9160HSR3 880 MHz, 35 W AVG. , 28 V SINGLE N - CDMA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRFE6S9160HR3-FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MRFE6S9160HSR3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRFE6S9160HSR3. For precise diagrams, and layout, please refer to the original PDF.

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base stati...

View more extracted text
ode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • TTIDyrQapfif=cica1lC2So0idn0egmsleA8-,CTPahorruroiteu=rgN3h5-1CW3D)aCMtthsAa.AnPvngee.rl,foBISram-n9ad5nwcCiedDt@hM=A818(.0P22iMlo8Ht8, zSM:yVHnDzc.D, PP=Aa2Rg8in=Vg9o, .l8ts,dB @ 0.01% Probability on CCDF. Power Gain — 21 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness.

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