Datasheet4U Logo Datasheet4U.com

MW6S004NT1 - RF Power Field Effect Transistor

Description

100 nF Chip Capacitor 9.1 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 kΩ, 1/4 W Chip Resistor 10 kΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number CDR33BX104AKYS ATC600B9R1CT500XT GRM55DR61H106KA88B T490D106K035AT CRCW12061000FKTA CRCW12061001FKTA

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • On - Chip RF Feedback for Broadband Stability.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MW6S004NT1 1 - 2000 MHz, 4 W, 28 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MW6S010GMR1 RF Power Field Effect Transistor NXP
MW6S010GNR1 RF Power Field Effect Transistors NXP
MW6S010MR1 RF Power Field Effect Transistor NXP
MW6S010NR1 RF Power Field Effect Transistors NXP
MW601 InSb Hall Matrixopto

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MW6S010GNR1 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MW6S010NR1 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MW6IC2015GNBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2015NBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2240GNBR1 RF LDMOS Wideband Integrated Power Amplifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
Published: |