MW7IC915NT1 Datasheet RF LDMOS Wideband Integrated Power Amplifier

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MW7IC915NT1 rf ldmos wideband integrated power amplifier by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MW7IC915NT1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	430.68 KB
Description	RF LDMOS Wideband Integrated Power Amplifier
Datasheet	MW7IC915NT1 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: MW7IC915N Rev.

0, 9/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz.

This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
On - Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
Integrated ESD Protection.
225°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel. 1. Refer to AN1977, Quiescent Current Thermal Trackin.

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