MW7IC930GNR1 Datasheet RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MW7IC930GNR1 rf ldmos wideband integrated power amplifiers by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MW7IC930GNR1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	717.36 KB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	MW7IC930GNR1 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev.

0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 960 MHz.

This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation.

Key Features

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Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (2) Integrated ESD Protection 225°C Capable Plastic Package GND NC RoHS Compliant NC In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. V GND V.

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