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MW7IC930NBR1 Datasheet RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MW7IC930NBR1 datasheet PDF. This datasheet also includes the MW7IC930GNR1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MW7IC930GNR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev.

0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 960 MHz.

This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation.

Key Features

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  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (2) Integrated ESD Protection 225°C Capable Plastic Package GND NC RoHS Compliant NC In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. V GND V.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MW7IC930NR1 RF LDMOS Wideband Integrated Power Amplifiers
MW7IC930GNR1 RF LDMOS Wideband Integrated Power Amplifiers
MW7IC915NT1 RF LDMOS Wideband Integrated Power Amplifier
MW7IC008NT1 RF LDMOS Wideband Integrated Power Amplifier
MW7IC18100GNR1 RF LDMOS Wideband Integrated Power Amplifiers
MW7IC18100NBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW7IC18100NR1 RF LDMOS Wideband Integrated Power Amplifiers