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MW7IC930NBR1, MW7IC930GNR1 Datasheet - Freescale Semiconductor

MW7IC930NBR1 RF LDMOS Wideband Integrated Power Amplifiers

47 pF Chip Capacitors 10 nF, 50 V Chip Cap.
Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 960 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation. Driver Application 900 MHz Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 106 mA, IDQ.

MW7IC930NBR1 Features

* www.DataSheet4U.com

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters

* On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) Integrated Quiescent Current Temperature

MW7IC930GNR1_FreescaleSemiconductor.pdf

This datasheet PDF includes multiple part numbers: MW7IC930NBR1, MW7IC930GNR1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

MW7IC930NBR1, MW7IC930GNR1

Manufacturer:

Freescale Semiconductor

File Size:

717.36 KB

Description:

Rf ldmos wideband integrated power amplifiers.

Note:

This datasheet PDF includes multiple part numbers: MW7IC930NBR1, MW7IC930GNR1.
Please refer to the document for exact specifications by model.

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MW7IC930NBR1 MW7IC930GNR1 LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor

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