Fuji Electric 2SK3804-01S
N-CHANNEL SILICON POWER MOSFET
FEATURES
High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof●Outline Drawings [mm]
●Equivalent circuit schematic Drain (D)
●
APPLICATIONS
Switching regulators DC-DC converters General purpose power amplifier Gate (G) Source (S)●
ABSOLUTE MAXIMUM RATINGS
at Tc=25℃(unless otherwise specified)DESCRIPTION
Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 75 VDSX 40 Continuous Drain Current ID ±70 Pulsed Drain Current IDP ±280 Gate-Source Voltage VGS ±20 Non-Repetitive Maximum Avalanche current IAS 70 Non-Repetitive Maximum Avalanche Energy EAS 133 Maximum Power Dissipation PD 135 Tch Operating and Storage Temperature range Tstg 150 -55 to +150 Note*1 : Tch≦150℃,See Fig.1 and Fig.2 Note*2 : Starting Tch=25℃,L=25μH,VCC=48V,RG=50Ω,See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. See to Avalanche Energy graph of page 4●
ELECTRICAL CHARACTERISTICS
at Tc=25℃(unless otherwise specified) Static Ratings V V VGS=-20V A A V A Note*1 mJ Note*2 W ℃ ℃DESCRIPTION
Symbol Conditions Min.