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2SK3872-01SJ - N-CHANNEL SILICON POWER MOSFET

This page provides the datasheet information for the 2SK3872-01SJ, a member of the 2SK3872-01L N-CHANNEL SILICON POWER MOSFET family.

Features

  • High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power.

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Datasheet preview – 2SK3872-01SJ

Datasheet Details

Part number 2SK3872-01SJ
Manufacturer Fuji Electric
File Size 145.88 KB
Description N-CHANNEL SILICON POWER MOSFET
Datasheet download datasheet 2SK3872-01SJ Datasheet
Additional preview pages of the 2SK3872-01SJ datasheet.

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Full PDF Text Transcription

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2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Outline Drawings (mm) 200406 Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Equivalent circuit schematic Item Drain-source voltage Symbol VDS Ratings 230 Unit V Remarks Drain(D) VDSX 230 V VGS=-30V Continuous Drain Current ID 40 A Pulsed Drain Current ID(puls] ±160 A Gate-Source Voltage VGS ±30 V Gate(G) Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt P
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