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2SK3873-01 - N-CHANNEL SILICON POWER MOSFET

Features

  • High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown.

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Datasheet Details

Part number 2SK3873-01
Manufacturer Fuji Electric
File Size 111.51 KB
Description N-CHANNEL SILICON POWER MOSFET
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Full PDF Text Transcription

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2SK3873-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Outline Drawings (mm) 200407 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Equivalent circuit schematic Item Drain-source voltage Symbol VDS Ratings 280 Unit V Remarks Drain(D) VDSX 280 V VGS=-30V Continuous Drain Current ID 56 A Pulsed Drain Current Gate-Source Voltage ID(puls] VGS ±224 ±30 A V Gate(G) Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV
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