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7MBP80RUA060 Datasheet Preview

7MBP80RUA060 Datasheet

U-Series IGBT

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U-series of IGBT-IPMs (600 V)
Kiyoshi Sekigawa
Hiroshi Endo
Hiroki Wakimoto
1. Introduction
Intelligent power modules (IPMs) are intelligent
power devices that incorporate drive circuits, protec-
tion circuits or other functionality into a modular
configuration. IPMs are widely used in motor driving
(general purpose inverter, servo, air conditioning,
elevator, etc.) and power supply (UPS, PV, etc.)
applications.
The equipment that uses these IPMs are required
to have small size, high efficiency, low noise, long
service life and high reliability.
In response to these requirements, in 1997, Fuji
Electric developed the industry’s first internal over-
heat protection function for insulated gate bipolar
transistors (IGBTs) and developed an R-IPM series
that achieved high reliability by employing an all-
silicon construction that enabled a reduction in the
number of components used.
Then in 2002, Fuji Electric changed the structure of
its IGBT chips from the punch through (PT) structure,
which had been in use previously, to a non-punch
through (NPT) structure, for which lifetime control is
unnecessary, in order to realize lower turn-off loss at
high temperature, and also established finer planar gate
and thin wafer processing technology to develop an R-
IPM3 series that realizes low conduction loss.
With the goal of reducing loss even further, Fuji
Electric has developed an IGBT device that employs a
trench NPT structure to realize lower conduction loss
and has developed a new free wheeling diode (FWD)
structure to improve the tradeoff between switching
noise and loss. Both of these technologies are incorpo-
rated into Fuji Electric’s newly developed U-series
IGBT-IPM (U-IPM) which is introduced below.
2. U-IPM Development Concepts and Product
Line-up
The concepts behind the development of the U-IPM
are listed below.
(1) Realization of lower loss
Lower loss can be realized by developing new
power elements and optimizing the drive performance.
Increasing the carrier frequency of the equipment
contributes to improved control performance. Also,
larger output can be obtained from the equipment
during the operation at the same carrier frequency.
(2) Continued use of the same package as prior
products
Table 1 Product line-up, characteristics and internal functions of the U-IPM series
Inverter part Brake part
Internal function
No. of
elements
Model
VDC VCES
(V) (V)
IC
(A)
PC
(W)
IC
PC
Both upper and
lower arms
Upper arm Lower arm
Package
type
(A) (W)
Dr UV TjOH OC ALM OC ALM TcOH
6MBP 20RUA060
20 84 –
– Yes Yes Yes None None Yes Yes None P619
6MBP 50RUA060
50 176 –
– Yes Yes Yes Yes None Yes Yes Yes
P610
6 in 1 6MBP 80RUA060 450 600 80 283 –
– Yes Yes Yes Yes None Yes Yes Yes
P610
6MBP100RUA060
100 360 –
– Yes Yes Yes Yes None Yes Yes Yes
P611
6MBP160RUA060
160 431 –
– Yes Yes Yes Yes None Yes Yes Yes
P611
7MBP 50RUA060
50 176 30 120 Yes Yes Yes Yes None Yes Yes Yes
P610
7MBP 80RUA060
80 283 50 176 Yes Yes Yes Yes None Yes Yes Yes
7 in 1
450 600
7MBP100RUA060
100 360 50 176 Yes Yes Yes Yes None Yes Yes Yes
P610
P611
7MBP160RUA060
160 431 50 176 Yes Yes Yes Yes None Yes Yes Yes
P611
Dr: IGBT driving circuit, UV : Under voltage lockout for control circuit, TjOH: Device overheat protection, OC: Over-current protection, ALM: Alarm output,
TcOH: Case temperature over-heat protection
*6MBP20RUA060 uses a shunt resistance-based over-current detection method at the N line.
48 Vol. 51 No. 2 FUJI ELECTRIC REVIEW
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Fuji

7MBP80RUA060 Datasheet Preview

7MBP80RUA060 Datasheet

U-Series IGBT

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Fig.1 External view of U-IPM packages
P619
P610
P611
Fig.2 Comparison of planar IGBT and trench IGBT chip cross
sections
R-ch p-
channel
R-acc
Emitter
electrode
Insulation
layer
Gate electrode
n+
source
Gate oxide
layer
n+
source
p-
channel
n- silicon
substrate
(a) Planar IGBT
p+ layer
Collector
electrode
(b) Trench IGBT
The continued use of the same package as with
prior products makes it possible to improve equipment
performance by replacing the IPM without having to
modify the design of the equipment.
Table 1 lists the product line-up, characteristics
and internal functions of Fuji Electric’s 600 V U-IPM
series. The U-IPM series maintains internal functions
and a package size that are interchangeable with the
R-IPM series; its rated current is 20 to 160 A for the “6
in 1” pack and 50 to 160 A for the “7 in 1” pack
(containing an internal IGBT for braking use).
Figure 1 shows an external view of the packages.
3. Characteristics of the Power Devices
A fifth-generation U-series IGBT (U-IGBT) is used
as the power device. This U-IGBT combines trench
gate technology with a basic design comprising Fuji
Electric’s floating zone (FZ) wafer technology, thin
wafer processing technology, carrier injection control
technology, and transportation factor improving tech-
nology.
Figure 2 compares the structures of the convention-
al planar IGBT and the trench IGBT. The adoption of
Table 2 Changes in IGBT technology
IGBT technology
Wafer
Wafer thickness
Structure
Gate structure
Lifetime control
Carrier injection
Transportation factor
R-IPM
N-IGBT
Epitaxial
350 µm
PT
Planar
Yes
High
Low
R-IPM3 U-IPM
T-IGBT U-IGBT
FZ
100 µm
NPT
Trench
None
Low
High
Fig.3 Change in cross-sectional structure of 600 V IGBT chip
GE
n+ p n+
n-
n+ buffer
p+ substrate
GE
n-
p
C
R-IPM3
Planar NPT
structure
thinner surface
GE
n-
p
C
U-IPM
Trench NPT
structure
C
R-IPM
Planar PT structure
a trench gate structure results in a smaller voltage
drop at the channel (R-ch) due to increased surface cell
density and results in a lower saturation voltage due to
the smaller voltage drop resulting from the elimination
of the planar device’s characteristic JFET region (R-
JFET). Moreover, short circuit immunity capability is
realized through optimization of the design of the
surface structure. Figure 3 illustrates the changes that
have occurred in the cross-sectional IGBT structure in
the transition from the conventional IGBT to the U-
IGBT, and Table 2 compares their applied technologies.
The FWD, in accordance with the U-IGBT, incorpo-
rates a new design featuring optimized wafer specifica-
tion, control of anode-side injection and optimal life-
time control technology to realize the characteristics of
low peak current during reverse recovery operation,
low generated loss, and soft recovery.
4. U-IPM Loss
4.1 Comparison of total loss
The marketplace requires that new IPM products
achieve lower levels of loss. (1) Increased carrier
frequency to enhance controllability and (2) larger
output current at the same carrier frequency are
necessary for the achievement of the goal. The loss
U-series of IGBT-IPMs (600 V)
49
Free Datasheet http://www.datasheet4u.net/


Part Number 7MBP80RUA060
Description U-Series IGBT
Maker Fuji
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