FDCY18S120 Description
FDCY18S120 SiC Schottky Barrier Diode http://.fujielectric./products/semiconductor/ FUJI Diode.
FDCY18S120 Key Features
- Ultra Low IR
- Low VF
- Tj MAX = 175˚C
- High reliability at higher temperatures
FDCY18S120 is Diode manufactured by Fuji Electric.
FDCY18S120 SiC Schottky Barrier Diode http://.fujielectric./products/semiconductor/ FUJI Diode.