Full PDF Text Transcription for K3529-01 (Reference)
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K3529-01. For precise diagrams, tables, and layout, please refer to the original PDF.
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2SK3529-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage
Symbol VDS
Ratings 800
Unit V
VDSX *5
800 V
Continuous drain current
ID
±7 A
Pulsed drain current
ID(puls]
±28 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
7A
Maximum Avalanche Energy
EAS
*1
235.3
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
40 kV/µs
Peak Diode Recovery dV/dt Max.
K3529-01 Datasheet
