YG875C20R Description
YG875C20R (200V, 20A) Ultra Low IR Schottky Barrier Diode http://.fujisemi.
YG875C20R Key Features
- Ultra Low IR
- Low VF
- Tj MAX = 175˚C
- High reliability at higher temperatures
YG875C20R is Diode manufactured by Fuji Electric.
| Part Number | Description |
|---|---|
| YG865C04R | Low IR Schottky barrier diode |
| YG865C10R | Low IR Schottky barrier diode |
| YG865C15R | High Voltage Schottky barrier diode |
YG875C20R (200V, 20A) Ultra Low IR Schottky Barrier Diode http://.fujisemi.