| Description | Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch ... |
| Features |
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-3P(Q)
Equivalent circ...
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| Datasheet |
 09N90E Datasheet - 352.58KB |
