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Fuji Electric

1MBC05-060 Datasheet Preview

1MBC05-060 Datasheet

Molded IGBT

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1MBC05-060,1MBC05D-060,
1MBG05D-060
600V / 5A
Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Molded IGBT
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
1MBC05-060 / IGBT
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector DC
Tc=25°C
current
Tc=100°C
1ms Tc=25°C
Max. power dissipation(IGBT)
Operating temperature
Storage temperature
Screw torque
Symbol
VCES
VGES
IC25
IC100
Icp
PC
Tj
Tstg
-
Rating
600
±20
13
5
52
50
+150
-40 to +150
40
Unit
V
V
A
A
A
W
°C
°C
N·m
Equivalent Circuit Schematic
IGBT
C:Collector
G:Gate
E:Emitter
1MBC05D-060, 1MBG05D-060 / IGBT+FWD
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector DC
Tc=25°C
current
Tc=100°C
1ms Tc=25°C
Max. power dissipation (IGBT)
Max. power dissipation (FWD)
Operating temperature
Storage temperature
Screw torque
Symbol
VCES
VGES
IC25
IC100
Icp
PC
PC
Tj
Tstg
-
Rating
600
±20
13
5
52
50
25
+150
-40 to +150
40
Unit
V
V
A
A
A
W
W
°C
°C
N·m
IGBT + FWD
C:Collector
G:Gate
E:Emitter




Fuji Electric

1MBC05-060 Datasheet Preview

1MBC05-060 Datasheet

Molded IGBT

No Preview Available !

1MBC05-060, 1MBC05D-060, 1MBG05D-060
Molded IGBT
Electrical characteristics (at Tj=25°C unless otherwise specified)
1MBC05-060 / IGBT
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
Characteristics
Min.
Typ.
––
––
5.5 –
––
– 400
– 85
– 15
––
––
––
––
Max.
1.0
20
8.5
3.0
1.2
0.6
1.0
0.35
1MBC05D-060, 1MBG05D-060 / IGBT+FWD
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
FWD forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
Characteristics
Min.
Typ.
––
––
5.5 –
––
– 400
– 85
– 15
––
––
––
––
––
––
Max.
1.0
20
8.5
3.0
1.2
0.6
1.0
0.35
3.0
0.3
Conditions
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=5mA
VGE=15V, IC=5A
VGE=0V
VCE=10V
f=1MHz
VCC=300V IC=5A
VGE=±15V
RG=330 ohm
(Half Bridge)
Unit
mA
µA
V
V
pF
µs
Conditions
Unit
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=5mA
VGE=15V, IC=5A
VGE=0V
VCE=10V
f=1MHz
VCC=300V, IC=5A
VGE=±15V
RG=330 ohm
(Half Bridge)
IF=5A, VGE=0V
IF=5A, VGE=-10V, di/dt=100A/µs
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
1MBC05-060 / IGBT
Item
Symbol
Thermal resistance
Rth(j-c)
Characteristics
Min.
Typ.
––
1MBC05D-060, 1MBG05D-060 / IGBT+FWD
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Characteristics
Min.
Typ.
––
––
Max.
2.50
Conditions
IGBT
Max.
2.50
5.00
Conditions
IGBT
FWD
Unit
°C/W
Unit
°C/W
°C/W
Outline drawings, mm
1MBC05-060, 1MBC05D-060
TO-220AB
1MBG05D-060
T pack-S (SMD type)


Part Number 1MBC05-060
Description Molded IGBT
Maker Fuji Electric
Total Page 5 Pages
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