20N60S1 Datasheet - Fuji Electric

N-Channel enhancement mode power MOSFET

20N60S1 Features

* Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Outline Drawings [mm] TO-220 3.6± 0.2 10 +0.5 0 4.5±0.2 1.3±0.2 Applications UPS Server Telecom Power conditioner system Power supply 3.6 ±0.2 13.5 min. 1.2 ± 0.2 1 2.54 ± 0.2 23 0.8 +0.2 -0.1

20N60S1 General Description

Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR E.

20N60S1 Datasheet (417.90 KB)

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Datasheet Details

Part number:

20N60S1

Manufacturer:

Fuji Electric

File Size:

417.90 KB

Description:

N-channel enhancement mode power mosfet.
FMP20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1.

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20N60S1 N-Channel enhancement mode power MOSFET Fuji Electric

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20N60S1 Features

20N60S1 General Description

Datasheet Details

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