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SPECIFICATION
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Device Name Type Name Spec. No. :
: :
IGBT MODULE
2MBI1200UG-170 MS5F 5932
Sep. 30 ’04 T.Nishimura Sep. 30 ’04 T.Miyasaka
Y.Seki
MS5F5932
1
13
H04-004-07b
R e v i s e d
Date Classification Ind. Content
R e c o r d s
Applied date Issued date Drawn Checked Checked Approved
Sep.-30-’04 Enactment
T.Miyasaka
Y.Seki
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MS5F5932
2 13
H04-004-06b
2MBI1200UG-170 / PKG.No. M248
1. Outline Drawing ( Unit : mm )
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2. Equivalent circuit
MS5F5932
3 13
H04-004-03a
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified )
Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Collector Power Dissipation Junction temperature
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2MBI1200UG-170 Datasheet
