2SK2644-01
2SK2644-01 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-IIS SERIES
Outline Drawings
TO-3P
Applications
Switching regulators UPS DC-DC converters General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Repetitive or non-repetitive Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol V DS ID ID[puls] VGS IAV EAV PD Tch Tstg Rating 500 ±18 ±72 ±35 18 518.5 125 +150 -55 to +150 Unit V A A V A m J W °C °C Remarks
Drain(D)
Equivalent circuit schematic
Gate(G)
Rch < =150°C
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=500V VGS=0V VGS=±35V VDS=0V ID=9A VGS=10V ID=9A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V RG=10 Ω ID=18A VGS=10V L=2.93m H Tch=25°C IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C
Min.
500 3.5 Tch=25°C Tch=125°C
Typ.
Max.
Units
V V µA m A n A Ω S
4.0 4.5 10 500 0.2 1.0 10 100 0.38 0.45 5.5 11 1700 2600 280 420 120 180 20 30 100 150 110 165 65 100 18 1.1 1.65 620 9.0 p F ns A V ns µC
Thermal characteristics
Item Thermal resistance .fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a)
Min.
Typ....
