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2SK3502-01MR - N CHANNEL SILICON POWER MOSET

This page provides the datasheet information for the 2SK3502-01MR, a member of the 2SK3502 N CHANNEL SILICON POWER MOSET family.

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-.

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Datasheet preview – 2SK3502-01MR

Datasheet Details

Part number 2SK3502-01MR
Manufacturer Fuji Electric
File Size 112.06 KB
Description N CHANNEL SILICON POWER MOSET
Datasheet download datasheet 2SK3502-01MR Datasheet
Additional preview pages of the 2SK3502-01MR datasheet.

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Full PDF Text Transcription

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2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 600 V Continuous drain current ID ±10 A Pulsed drain current ID(puls] ±40 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 10 A Maximum Avalanche Energy EAS *1 217 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Max. power dissipation PD Ta=25°C Tc=25°C 2.
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