Datasheet4U Logo Datasheet4U.com

2SK3516-01SJ - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3516-01SJ datasheet PDF. This datasheet also covers the 2SK3516-01L variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3516-01L_FujiElectric.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK351 N-Channel MOSFET Transistor Inchange Semiconductor
2SK351 Silicon N-Channel MOSFET Hitachi
2SK3510 N-Channel Power MOSFET Renesas
2SK3510 MOS Field Effect Transistor Kexin
2SK3511 MOSFET Kexin

Other Datasheets by Fuji Electric

Part Number Description
2SK3516-01S N-CHANNEL SILICON POWER MOSFET
2SK3516-01L N-CHANNEL SILICON POWER MOSFET
2SK3512-01L N-Channel MOSFET
2SK3512-S N-Channel MOSFET
2SK3512-SJ N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2SK3516-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 450 A ID ±8 A ID(puls] ±32 V VGS ±30 A IAR *2 8 mJ EAS *1 193 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 65 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=5.
Published: |