Datasheet4U Logo Datasheet4U.com

2SK3537-01MR - N-CHANNEL SILICON POWER MOSFET

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3537-01MR N-Channel MOSFET Transistor Inchange Semiconductor
2SK3530 N-Channel MOSFET INCHANGE
2SK3530-01MR N-Channel 800V Power MOSFET VBsemi
2SK3531-01 N-Channel MOSFET Transistor Inchange Semiconductor
2SK3532-01MR N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Fuji Electric

Part Number Description
2SK3530-01MR N-Channel MOSFET
2SK3531-01 N-CHANNEL SILICON POWER MOSFET
2SK3532-01MR N-CHANNEL SILICON POWER MOSFET
2SK3533-01 N-CHANNEL SILICON POWER MOSFET
2SK3534-01MR N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription

Click to expand full text
2SK3537-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 150 V VDSX *5 130 V Continuous drain current ID ±33 A Pulsed drain current ID(puls] ±132 A Gate-source voltage VGS ±20 V Repetitive or non-repetitive IAR *2 33 A Maximum Avalanche Energy EAS *1 169 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt Max.
Published: |