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2SK3651-01R - N-CHANNEL SILICON POWER MOSFET

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-.

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www.DataSheet4U.com 2SK3651-01R FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 200 V 220 A Continuous drain current ±25 A Pulsed drain current ±100 V Gate-source voltage ±30 A Non-repetitive Avalanche current 25 mJ Maximum Avalanche Energy 372 kV/µs Maximum Drain-Source dV/dt 20 kV/µs Peak Diode Recovery dV/dt 5 Max. power dissipation 3.
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