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2SK3681-01 - N-CHANNEL SILICON POWER MOSFET

Features

  • Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2.

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Datasheet Details

Part number 2SK3681-01
Manufacturer Fuji Electric
File Size 116.14 KB
Description N-CHANNEL SILICON POWER MOSFET
Datasheet download datasheet 2SK3681-01 Datasheet
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Full PDF Text Transcription

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2SK3681-01 FUJI POWER MOSFET Super FAP-G Series 200401 N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 600 V VDSX 600 V VGS=-30V Continuous drain current ID ±43 A Pulsed drain current ID(puls] ±172 A Gate-source voltage VGS ±30 V Non-Repetitive IAS 43 A Tch=25°C Maximum avalanche current Repetitive or IAR *1 21.5 A Tch<=150°C Maximum avalanche current *1 Non-Repetitive EAS 808.
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