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2SK3730-01MR Datasheet N-CHANNEL SILICON POWER MOSFET

Manufacturer: Fuji Electric

Overview: 2SK3730-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET.

General Description

Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 75 VDSX 40 Continuous Drain Current ID ±70 Pulsed Drain Current IDP ±280 Gate-Source Voltage VGS ±20 Non-Repetitive Maximum Avalanche current IAS 70 Non-Repetitive Maximum Avalanche Energy EAS 251 Maximum Power Dissipation PD 70 Tch Operating and Storage Temperature range Tstg 150 -55 to +150 Note*1 : Tch≦150℃,See Fig.1 and Fig.2 Note*2 : Starting Tch=25℃,L=48μH,VCC=48V,RG=50Ω,See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current.

See to Avalanche Energy graph of page 4 ■Electrical Characteristics at Tc=25℃(unless otherwise specified) Static Ratings V V VGS=-20V A A V A Note*1 mJ Note*2 W ℃ ℃ Description Symbol Conditions Min.

Typ.

Key Features

  • High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof.
  • Outline Drawings [mm].
  • Equivalent circuit schematic Drain (D).