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Fuji Electric

2SK3774-01SJ Datasheet Preview

2SK3774-01SJ Datasheet

N-CHANNEL SILICON POWER MOSFET

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2SK3774-01L,S,SJ
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm) 200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
See to P4
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Drain-source voltage VDS 300
VDSX
300
Continuous Drain Current
ID
32
Pulsed Drain Current
ID(puls]
±128
Gate-Source Voltage VGS ±30
Maximum Avalanche current
IAR
32
Non-Repetitive
EAS 597.4
Maximum Avalanche Energy
Repetitive
EAR 27
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
270
2.02
Operating and Storage
Tch
+150
Temperature range
Tstg -55 to +150
Unit
V
V
A
A
V
A
mJ
Remarks
VGS=-30V
Note *1
Note *2
mJ Note *3
kV/µs VDS=<300V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Note *1:Tch =< 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=13A,L=6.13mH,
VCC=48V,RG=50
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF=< -ID, -di/dt = 50A/µs,VCC=<BVDSS,Tch=<150°C
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=300V VGS=0V
VDS=240V VGS=0V
VGS=±30V VDS=0V
ID=16A VGS=10V
Tch=25°C
Tch=125°C
ID=16A VDS=25V
VDS=25V
VGS=0V
f=1MH
VCC=180V
ID=16A
VGS=10V
RGS=10
VCC=150V
ID=32A
VGS=10V
IF=32A VGS=0V Tch=25°C
IF=32A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
300 V
3.0 5.0 V
25 µA
250 µA
10 100
nA
0.10 0.13
12 24
S
1970 2955
pF
335 502
20 30
29 44 ns
7.5 11
57 86
7 10.5
44.5
18
67
27
nC
13.5
20.5
0.90
270
3.0
1.50 V
ns
µC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
75 °C/W
www.fujielectric.co.jp/fdt/scd
1




Fuji Electric

2SK3774-01SJ Datasheet Preview

2SK3774-01SJ Datasheet

N-CHANNEL SILICON POWER MOSFET

No Preview Available !

2SK3774-01L,S,SJ
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
400
300
200
100
0
0 25 50 75 100 125 150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
100
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
80
70
20V
10V
60 8V
50
40
30 7V
20
6.5V
10
VGS=6.0V
0
0 4 8 12 16 20 24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
0.30 VGS=6V 6.5V
7V
0.25
0.20
8V
0.15
10V
20V
0.10
0.05
0.00
0
10 20 30 40 50 60
ID [A]
10
1
0.1
0.1
1 10
ID [A]
100
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=16A,VGS=10V
0.5
0.4
0.3
0.2
max.
typ.
0.1
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
2


Part Number 2SK3774-01SJ
Description N-CHANNEL SILICON POWER MOSFET
Maker Fuji Electric
Total Page 4 Pages
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