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2SK3804-01S - N-CHANNEL SILICON POWER MOSFET

Description

Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 75 VDSX 40 Continuous Drain Current ID ±70 Pulsed Drain Current IDP ±280 Gate-Source Voltage VGS ±20 Non-Repetitive Maximum Avalanche current IAS 70 Non-Repetitive Maximum Avalanche Energy EAS 133 Maximum Power Dis

Features

  • High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof.
  • Outline Drawings [mm].
  • Equivalent circuit schematic Drain (D).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3804-01S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET ■Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof ■Outline Drawings [mm] ■Equivalent circuit schematic Drain (D) ■Applications Switching regulators DC-DC converters General purpose power amplifier Gate (G) Source (S) ■Absolute Maximum Ratings at Tc=25℃(unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 75 VDSX 40 Continuous Drain Current ID ±70 Pulsed Drain Current IDP ±280 Gate-Source Voltage VGS ±20 Non-Repetitive Maximum Avalanche current IAS 70 Non-Repetitive Maximum Avalanche Energy EAS 133 Maximum Power Dissipation PD 135 Tch Operating and Storage Temperature ran
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