2SK3982-01MR - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

Key Features

High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power High voltage.

2SK3982-01MR n-channel silicon power mosfet by Fuji Electric - Datasheet Preview

Datasheet Details

Part number	2SK3982-01MR
Manufacturer	Fuji Electric
File Size	217.84 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	2SK3982-01MR Datasheet

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2SK3982-01MR FUJI POWER MOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power High voltage Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] TO-220F Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 900 V VDSX 900 V VGS=-30V Continuous drain current ID 2.6 A Pulsed drain current ID(puls] ±10.4 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR 2.6 A Note *1 Non-repetitive Maximum avalanche energy EAS 349.