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Fuji Electric

7MBR25VKD120-50 Datasheet Preview

7MBR25VKD120-50 Datasheet

IGBT

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http://www.fujielectric.com/products/semiconductor/
7MBR25VKD120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 25A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Repetitive peak reverse voltage (Diode)
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
VCES
VGES
Ic
Icp
-Ic
-Ic pulse
PC
VCES
VGES
IC
ICP
PC
VRRM
VRRM
IO
IFSM
I2t
Junction temperature
Tj
Operating junciton temperature
(under switching conditions)
Tjop
Case temperature
Storage temperature
TC
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Screw torque Mounting (*3)
-
Continuous
1ms
1ms
1 device
TC=100°C
TC=80°C
Continuous
1ms
1 device
TC=80°C
TC=80°C
50Hz/60Hz, sine wave
10ms, Tj=150°C
half sine wave
Inverter, Brake
Converter
Inverter, Brake
AC : 1min.
M4
Maximum
ratings
1200
±20
25
50
25
50
180
1200
±20
25
50
180
1200
1600
25
370
685
175
150
150
125
-40 to +125
2500
1.7
Units
V
V
A
W
V
V
A
W
V
V
A
A
A2s
˚C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 1.3-1.7 Nm (M4)
1 1495
FEBRUARY 2013




Fuji Electric

7MBR25VKD120-50 Datasheet Preview

7MBR25VKD120-50 Datasheet

IGBT

No Preview Available !

7MBR25VKD120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Internal gate resistance
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Rg(int)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
ICES
IGES
VCE (sat)
(terminal)
VCE (sat)
(chip)
Rg(int)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VGE = 0V, VCE = 1200V
VGE = 0V, VGE = ±20V
VCE = 20V, IC = 25mA
VGE = 15V
IC = 25A
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 15V
IC = 25A
Tj=25°C
Tj=125°C
Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
IC = 25A
VGE = +15 / -15V
RG = 20Ω
IF = 25A
IF = 25A
IF = 25A
VGE = 0V
VCE = 1200V
VCE = 0V
VGE = +20 / -20V
VGE = 15V
IC = 25A
VGE = 15V
IC = 25A
-
VCE = 600V
IC = 25A
VGE = +15 / -15V
RG = 20Ω
VR = 1200V
IF = 25A
VR = 1600V
T = 25°C
T = 100°C
T = 25 / 50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
terminal
chip
Characteristics
min. typ. max.
- - 1.0
- - 200
6.0 6.5 7.0
- 2.00 2.45
- 2.35 -
- 2.40 -
- 1.85 2.25
- 2.20 -
- 2.25 -
-0-
- 2.1 -
- 0.18 1.20
- 0.14 0.60
- 0.02 -
- 0.29 1.00
- 0.06 0.30
- 1.60 2.05
- 1.70 -
- 1.65 -
- 1.45 1.90
- 1.55 -
- 1.50 -
- - 0.35
- - 1.0
Units
mA
nA
V
V
Ω
nF
μs
V
μs
mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
465
3305
-
2.00
2.35
2.40
1.85
2.20
2.25
0
0.18
0.14
0.29
0.06
-
1.15
1.00
-
5000
495
3375
200
2.45
-
-
2.25
-
-
-
1.20
0.60
1.00
0.30
1.0
1.60
-
1.0
-
520
3450
nA
V
Ω
μs
mA
V
mA
Ω
K
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Contact thermal resistance (1device) (*4)
Rth(j-c)
Rth(c-f)
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 0.85
- - 1.20
- - 0.85
- - 1.15
- 0.05 -
Units
˚C/W
2


Part Number 7MBR25VKD120-50
Description IGBT
Maker Fuji Electric
PDF Download

7MBR25VKD120-50 Datasheet PDF






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