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Fuji Electric

7MBR75UB120 Datasheet Preview

7MBR75UB120 Datasheet

IGBT MODULE

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7MBR75UB120
IGBT MODULE (U series)
1200V / 75A / PIM
IGBT Modules
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
VCES
VGES
IC
ICP
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
-IC
-IC pulse
PC
VCES
VGES
IC
ICP
Collector power disspation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
PC
VRRM
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Condition
Continuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
1ms
1 device
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
Rat ing
1200
±20
75
50
150
100
75
150
275
1200
±20
35
25
70
50
160
1200
1600
75
520
1352
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
connected together and shorted to base plate when isolation test will be done.
Unit
V
V
A
W
V
V
A
W
V
V
A
A
A2s
°C
°C
V
V
N·m
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Fuji Electric

7MBR75UB120 Datasheet Preview

7MBR75UB120 Datasheet

IGBT MODULE

No Preview Available !

IGBT Module
7MBR75UB120
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
Thermal resistance Characteristics
Item
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
ICES
IGES
VCE(sat)
(terminal)
VCE(sat)
(chip)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V
Tj=25°C
Ic=75A
Tj=125°C
Tj=25°C
Tj=125°C
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=75A
VGE=±15V
RG= 22
VGE= 0 V
Tj=25°C
IF=75A
Tj=125°C
Tj=25°C
Tj=125°C
IF=75A
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=35A
Tj=25°C
VGE=15V
Tj=125°C
Tj=25°C
Tj=125°C
VCC=600V
IC=35A
VGE=±15V
RG= 43
VR=1200V
IF=75A
terminal
VGE=0V
chip
VR=1600V
T=25°C
T=100°C
T=25/50°C
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FWD
Brake IGBT
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Characteristics
Min.
-
T yp.
-
Max.
1.0
- - 200
4.5 6.5 8.5
- 2.35 2.80
- 2.75 -
- 2.00 2.45
- 2.40 -
-6 -
- 0.53 1.20
- 0.43 0.60
- 0.03 -
- 0.37 1.00
- 0.07 0.30
- 2.15 2.50
- 2.35 -
- 1.80 2.15
- 2.00 -
- - 0.35
- - 1.0
- - 200
- 2.30 2.75
- 2.65 -
- 1.95 2.40
- 2.30 -
- 0.53 1.20
- 0.43 0.60
- 0.37 1.00
- 0.07 0.30
- - 1.0
- 1.40 1.75
- 1.30 -
- - 1.0
- 5000
-
465 495
520
3305
3375
3450
Min.
-
-
-
-
-
Characteristics
T yp.
Max.
- 0.45
- 0.73
- 0.76
- 0.50
0.05 -
Unit
mA
nA
V
V
nF
µs
V
µs
mA
nA
V
µs
mA
V
mA
K
Unit
°C/W
Equivalent Circuit Schematic
[Converter]
21(P)
[Brake]
22(P1)
[Inverter]
[Thermistor]
89
20(Gu)
18(Gv)
16(Gw)
1(R) 2(S) 3(T)
7(B)
19(Eu)
17(Ev)
4(U)
15(Ew)
5(V)
6(W)
23(N)
14(Gb)
24(N1)
13(Gx)
12(Gy)
11(Gz)
10(En)


Part Number 7MBR75UB120
Description IGBT MODULE
Maker Fuji Electric
Total Page 7 Pages
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