FMH11N90E Datasheet N-channel Silicon Power MOSFET

Manufacturer: Fuji Electric

Overview: www.DataSheet.co.kr FMH11N90E Super FAP-E3 series.

Datasheet Details

Part number	FMH11N90E
Manufacturer	Fuji Electric
File Size	582.95 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMH11N90E_FujiElectric.pdf

General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 900 900 ±11 ±44 ±30 11 811.9 28.5 2.2 100 2.5 285 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise speciﬁed) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Conditions I D =250µA, VGS =0V I D =250µA, VDS =VGS VDS =900V, VGS =0V VDS =720V, VGS =0V VGS =±30V, VDS =0V

Key Features

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI POWER MOSFET N-.

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