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FMH23N50E Datasheet N-channel Silicon Power MOSFET

Manufacturer: Fuji Electric

Overview: FMH23N50E Super FAP-E3 series FUJI POWER MOSFET N-CHANNEL SILICON POWER.

General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS IAR EAS EAR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Tch Temperature range Tstg Characteristics 500 500 ±23 ±92 ±30 23 767.3 31.5 9.3 100 2.50 315 150 -55 to + 150 Equivalent circuit schematic Drain(D) Gate(G) Source(S) Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) IDSS IGSS RDS (on) gfs Ciss Coss Crss td(on) tr td(off) tf Qth QG QGS QGD IAV VSD trr Qrr Conditions ID=250µA, VGS=0V ID=250µA, VDS=VGS VDS=500V, VGS=0V VDS=400V, VGS=0V VGS=±30V, VDS=0V ID=11.5A, VGS=10V ID=11.5A, VDS=25V VDS=25V VGS = 0V f=

Key Features

  • Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Outline Drawings [mm] TO-3P(Q).

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