FMP06N60E

The FMP06N60E is N-CHANNEL SILICON POWER MOSFET designed by Fuji Electric.

Product Overview

Fuji Electric

Datasheet Details

Part number	FMP06N60E
Manufacturer	Fuji Electric
File Size	572.84 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMP06N60E_FujiElectric.pdf
Additional preview pages of the FMP06N60E datasheet.

Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 600 600 ±6 ±24 ±30 6 313.7 10.5 4.5 100 2.02 105 150 -55 to + 150 Unit V V A A

Features

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-.

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Published: Oct 22, 2013 |