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FMR19N60E Datasheet N-CHANNEL SILICON POWER MOSFET

Manufacturer: Fuji Electric

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General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS IAR EAS EAR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Isolation Voltage Tch Tst

Overview

FMR19N60E Super FAP-E3 series FUJI POWER MOSFET N-CHANNEL SILICON POWER.

Key Features

  • Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Outline Drawings [mm] TO-3PF.

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