FMR19N60ES - N-CHANNEL SILICON POWER MOSFET

Product Overview

Fuji Electric

Datasheet Details

Part number	FMR19N60ES
Manufacturer	Fuji Electric
File Size	400.14 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMR19N60ES Datasheet
Additional preview pages of the FMR19N60ES datasheet.

Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS IAR EAS EAR dV/dt -di/dt Maximum Power Dissipation PD Operati

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability.

📁 Similar Datasheet

FMR-202 - 27MHz Receiver (ETC)
FMR-G5HS - Damper Diodes (Sanken electric)
FMR0H104ZF - Supercapacitors (KEMET)
FMR0H473ZF - Supercapacitors (KEMET)
FMR0V104ZF - Supercapacitors (KEMET)
FMR202 - 27MHz Receiver (Elsema)
FMRX1-433A - FM R.F. RECEIVER (RF Solutions)
FMRX1-xxxA - FM R.F. RECEIVER (RF Solutions)

Other Datasheets by Fuji Electric

FMR19N60E - N-CHANNEL SILICON POWER MOSFET
FMR11N90E - N-CHANNEL SILICON POWER MOSFET
FMR17N60ES - N-CHANNEL SILICON POWER MOSFET
FMR09N90E - N-CHANNEL SILICON POWER MOSFET
FMR23N60E - N-CHANNEL SILICON POWER MOSFET

Published: Jun 9, 2017 |