Fuji Electric FMR23N60E
N-CHANNEL SILICON POWER MOSFET
FEATURES
Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Outline Drawings [mm] TO-3PFAPPLICATIONS
Switching regulators UPS (Uninterruptible Power Supply) DC-DC convertersMAXIMUM RATINGS
and CharacteristicsABSOLUTE MAXIMUM RATINGS
at Tc=25°C (unless otherwise specified)DESCRIPTION
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS IAR EAS EAR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Isolation Voltage VISO Characteristics 600 600 ±23 ±92 ±30 23 1033.1 20 7.5 100 3.13 200 150 -55 to + 150 2 Ele...