FMR23N60E - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

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Datasheet Details

Part number	FMR23N60E
Manufacturer	Fuji Electric
File Size	461.45 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMR23N60E-FujiElectric.pdf

FMR23N60E Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS IAR EAS EAR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Isolation Voltage VISO Characteristics 600 600 ±23 ±92 ±30 23 1033.1 20 7.5 100 3.13 200 1

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Outline Drawings [mm] TO-3PF.

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Published: Sep 3, 2020 |