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Fuji Electric

FMR23N60E Datasheet Preview

FMR23N60E Datasheet

N-CHANNEL SILICON POWER MOSFET

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FMR23N60E
Super FAP-E3 series
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Outline Drawings [mm]
TO-3PF
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
IDP
VGS
IAR
EAS
EAR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch
Tstg
Isolation Voltage
VISO
Characteristics
600
600
±23
±92
±30
23
1033.1
20
7.5
100
3.13
200
150
-55 to + 150
2
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
VGS (th)
IDSS
IGSS
RDS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Conditions
ID=250µA, VGS=0V
ID=250µA, VDS=VGS
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
ID=11.5A, VGS=10V
ID=11.5A, VDS=25V
VDS=25V
VGS = 0V
f=1MHz
Vcc = 30 0V
VGS=10V
I D =11.5A
RGS=5.1Ω
Vcc = 30 0V
ID=23A
VGS=10V
L=1.56mH, Tch=25°C
IF=23A, VGS=0V, Tch=25°C
IF=23A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Tch =25°C
Tch =125°C
min.
600
2.5
-
-
-
-
14
-
-
-
-
-
-
-
-
-
-
23
-
-
-
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
W
°C
°C
kVrms
typ.
-
3.0
-
-
10
0.24
28
4400
380
30
26
12
144
22
130
30
40
-
0.90
0.92
14
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
t = 60sec, f = 60Hz
max.
-
3.5
25
250
100
0.28
-
6600
570
45
39
18
216
33
195
45
60
-
1.35
-
-
Unit
V
V
µA
nA
S
pF
ns
nC
A
V
µs
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=10A, L=18.9mH, Vcc=60V, RG=50Ω
EAS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Test Conditions
Channel to case
Channel to ambient
min.
typ.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=7.5kV/µs, Vcc≤BVDSS, Tch≤150°C.
1
max.
0.630
40.0
Unit
°C/W
°C/W




Fuji Electric

FMR23N60E Datasheet Preview

FMR23N60E Datasheet

N-CHANNEL SILICON POWER MOSFET

No Preview Available !

FMR23N60E
Allowable Power Dissipation
PD=f(Tc)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
60
10V
50
6.0V
5.5V
40
30
5.0V
20
10
VGS=4.5V
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25°C
102
101
t=
1µs
10µs
100µs
100
1ms
10-1
Power loss waveform :
Square waveform
10-2
100
PD
tt
101
102
VDS [V]
D.C.
103
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
2
3
4
5
6
7
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
0.7
VGS=4.5V 5V
0.6
0.5
5.5V
0.4
6V 10V
0.3
0.2
0.1
0
2
10
20
30
40
50
60
ID [A]



Part Number FMR23N60E
Description N-CHANNEL SILICON POWER MOSFET
Maker Fuji Electric
Total Page 3 Pages
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FMR23N60E Datasheet PDF





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