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FMV30N60S1 - N-Channel enhancement mode power MOSFET

General Description

Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR E

Key Features

  • Pb-free lead terminal RoHS compliant.

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Full PDF Text Transcription (Reference)

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FMV30N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-220F(SLS) Equivalent circuit schematic â‘¡Drain Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS.