High speed switching Low on-resistance No secondary breakdown Low driving power High voltage www. DataSheet4U. com VGS=±30V Guarantee Avalanche-proof
FUJI POWER MOSFET
FAP-IIA SERIES
Outline Drawings
TO-220F15.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2003. For precise diagrams, and layout, please refer to the original PDF.
2SK2003-01MR N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage www.DataSheet4U.com VGS=...
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dary breakdown Low driving power High voltage www.DataSheet4U.com VGS=±30V Guarantee Avalanche-proof FUJI POWER MOSFET FAP-IIA SERIES Outline Drawings TO-220F15 Applications Switching regulators UPS DC-DC converters General purpose power amplifier 2.54 3. Source JEDEC EIAJ SC-67 Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max.
K2003 Datasheet
