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Fuji Electric

K3277-01L Datasheet Preview

K3277-01L Datasheet

2SK3277-01L

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> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
2SK3272-01L,S
Trench Gate MOSFET
N-channel MOS-FET
60V 6,5m±80A 135W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
V DS
ID
I D(puls)
VGS
60
±80
±320
+30 / -20
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
E AV
PD
T ch
T stg
613
135
150
-55 ~ +150
* L=0,13mH, VCC=24V
Unit
V
A
A
V
mJ*
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=10mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V
VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=40A
VGS=40V
Min.
60
2,5
Typ. Max.
3,0
1,0
10,0
10
5,0
3,5
100,0
500,0
100
6,5
Unit
V
V
µA
µA
nA
m
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
Turn-Off-Time toff (ton=td(off)+tf)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
g fs
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
I AV
V SD
t rr
Q rr
ID=40A
VDS=10V
VDS=25V
VGS=0V
f=1MHz
VCC=30V
VGS=10V
ID=80A
RGS=10
L = 100µH Tch=25°C
IF=80A VGS=0V Tch=25°C
IF=50A VGS=0V
-dIF/dt=100A/µs Tch=25°C
25 50
9000
1250
700
50
200
150
135
80
1,0
85
0,25
S
pF
pF
pF
ns
ns
ns
ns
A
1,5 V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to ambient
channel to case
Min. Typ. Max. Unit
75,0 °C/W
0,926 °C/W




Fuji Electric

K3277-01L Datasheet Preview

K3277-01L Datasheet

2SK3277-01L

No Preview Available !

N-channel MOS-FET
60V 6,5m±80A 135W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK3272-01L,S
Trench Gate MOSFET
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=25A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
1
2
3
VDS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
Tch [°C]
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
4
5
6
ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
7
ID [A]
Typical Gate Charge Characteristic
VGS=f(Qg); ID=80A; Tch=25°C
Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; Tch=25°C
8
↑↑
9
VDS [V]
Maximum Avalanche Energy vs. starting Tch
EAV=f(starting Tch): VCC=24V; IAV 80A
10
Qg [nC]
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
12
VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
starting Tch [°C]
VDS [V]
This specification is subject to change without notice!
t [s]


Part Number K3277-01L
Description 2SK3277-01L
Maker Fuji Electric
Total Page 2 Pages
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