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Fuji Electric

K3520-01MR Datasheet Preview

K3520-01MR Datasheet

N-CHANNEL SILICON POWER MOSFET

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2SK3520-01MR
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
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UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
500 V
Continuous drain current
ID
±9 A
Pulsed drain current
ID(puls]
±36 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
9A
Maximum Avalanche Energy
EAS
*1
155.3
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
2.16 W
Tc=25°C
48
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
Isolation Voltage
VISO *5
2 kVrms
*1 L=3.5mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch =<150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 500V *5 t=60sec, f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=4A VGS=10V
ID=4A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=4A
VGS=10V
RGS=10
VCC=250V
ID=8A
VGS=10V
L=3.5mH Tch=25°C
IF=8A VGS=0V Tch=25°C
IF=8A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
500
3.0
3.5
9
Typ.
10
0.65
7
750
100
4.0
14
9
24
6
20
8.5
5.5
1.00
0.65
3.5
Max. Units
V
5.0 V
25 µA
250
100 nA
0.85
S
1130
pF
150
6.0
21 ns
14
36
9
30 nC
13
8.5
1.50
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
2.60
58.0
Units
°C/W
°C/W
1




Fuji Electric

K3520-01MR Datasheet Preview

K3520-01MR Datasheet

N-CHANNEL SILICON POWER MOSFET

No Preview Available !

2SK3520-01MR
Characteristics
Allowable Power Dissipation
PD=f(Tc)
50
40
30
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10
0
0 25 50 75 100 125 150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
VGS=6.5V 7.0V
2.0
7.5V
8V
1.5 10V
20V
1.0
0.5
0.0
0
5 10 15 20
ID [A]
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
20
20V
18 10V
16 8V
14
12
7.5V
10
8
6 7.0V
4
2 VGS=6.5V
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
ID [A]
10
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4A,VGS=10V
2.0
1.8
1.6
1.4
1.2
1.0 max.
0.8 typ.
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
2


Part Number K3520-01MR
Description N-CHANNEL SILICON POWER MOSFET
Maker Fuji Electric
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