Datasheet4U Logo Datasheet4U.com

K3525-01MR - 2SK3525-01MR

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-.

📥 Download Datasheet

Datasheet preview – K3525-01MR

Datasheet Details

Part number K3525-01MR
Manufacturer Fuji Electric
File Size 182.13 KB
Description 2SK3525-01MR
Datasheet download datasheet K3525-01MR Datasheet
Additional preview pages of the K3525-01MR datasheet.

📁 Similar Datasheet

  • K3525-01MR - N-Channel 650V Power MOSFET (VBsemi)
  • K3520PQ-XH - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor (KEC)
  • K3529-01 - 2SK3529-01 (Fuji)
  • K350 - Silicon N-Channel MOSFET (Hitachi)
  • K3500G - Clock Oscillator (MTRONPTI)
  • K3503FC450 - Medium Voltage Thyristor (IXYS)
  • K3503FC460 - Medium Voltage Thyristor (IXYS)
  • K3503FC480 - Medium Voltage Thyristor (IXYS)
  • K3503FC500 - Medium Voltage Thyristor (IXYS)
  • K3503FC520 - Medium Voltage Thyristor (IXYS)
Other Datasheets by Fuji Electric

Full PDF Text Transcription

Click to expand full text
2SK3525-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V 600 V DS A ID ±6 A ±24 ID(puls] V ±30 VGS A IAR *2 6 mJ EAS *1 193 kV/µs 20 dVDS/dt *4 *3 5 dV/dt kV/µs 2.16 PD Ta=25°C W Tc=25°C 58 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C *1 L=9.
Published: |